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 STU4A60S
Sensitive Gate Triac
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) Low On-State Voltage (1.6V(Typ.) @ ITM) High Commutation dv/dt Sensitive Gate Triggering 4 Mode TO251 A G
K
General Description
Sensitive gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings (TJ= 25C unless otherwise specified)
Symbol
VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM TJ TSTG
Param Param e Off-State Voltage Repetitive Peakter
R.M.S On-State Current Surge On-State Current
Conditi on
TC = 109 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive
Ratings Rating
600 4.0 30/33
Units Unit
V A A
I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature
4.5 1.5 0.1 1.0 7.0 - 40 ~ 125 - 40 ~ 150
A2s W W A V C C
Thermal Characteristics
Symbol RJc RJA Parameter Thermal Resistance Junction to Case(DC) Thermal Resistance Junction to Ambient(DC) Value 2.6 100 Units /W /W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
1/5
STU4A60S
Electrical Characteristics (TC=25
unless otherwise noted)
Ratin Sym bol Symb Items
Repetitive Peak Off-State Current
Conditions tio
V= VDRM, Single Phase, Half Wave TJ = 125 C
Min.
yp. Tgs
Max.
1.0
Unit
IDRM
mA
VTM I+GT1 III+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c
Peak On-State Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Gate Trigger Voltage Gate Trigger Current
IT = 6 A, Inst. Measurement

8 1.6
1.6 5 5
V
VD = 6 V, RL=10 VD = 6 V, RL=10 TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -2.0 A/ms, VD=2/3 VDRM 0. 2 5
mA 5 12 1.4 1.4 V 1.4 2.0 V
V/
IH
Holding Current
10
mA
2/5
STU4A60S
3/5
STU4A60S
4/5
STU4A60S
TO-251 Package Dimension TO-251
Unit: mm
5/5


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